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Integrated circuits

Memory grows up

Nature Nanotechnology volume 5, pages 177–178 (2010)Cite this article

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Three-dimensional integration may allow for continued improvements in the speed, density and cost of non-volatile memory.

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Figure 1: Cross-point phase-change memory and 3D NAND flash are competing to provide viable cost-effective solutions for next-generation high-density memories.

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Authors and Affiliations

  1. Agostino Pirovano is at Numonyx Italia, Via C. Olivetti 2, 20041, Agrate Brianza, Italy. agostino.pirovano@numonyx.com,

    Agostino Pirovano

  2. Klaus Schuegraf is at Applied Materials, 5726 Trowbridge Way, San Jose, California 95138, USA. Klaus_Schuegraf@amat.com,

    Klaus Schuegraf

Authors
  1. Agostino Pirovano
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  2. Klaus Schuegraf
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Pirovano, A., Schuegraf, K. Memory grows up. Nature Nanotech 5, 177–178 (2010). https://doi.org/10.1038/nnano.2010.36

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