Letter abstract
Nature Nanotechnology 4, 287 - 291 (2009)
Published online: 22 March 2009 | doi:10.1038/nnano.2009.49
Subject Categories: Electronic properties and devices | Structural properties
An electric current spike linked to nanoscale plasticity
Roman Nowak1,2,6, Dariusz Chrobak1,3,6, Shijo Nagao1,6, David Vodnick4, Michael Berg4, Antti Tukiainen5 & Markus Pessa5
Abstract
The increase in semiconductor conductivity that occurs when a hard indenter is pressed into its surface has been recognized for years1, 2, 3, 4, 5, and nanoindentation experiments have provided numerous insights into the mechanical properties of materials. In particular, such experiments have revealed so called pop-in events, where the indenter suddenly enters deeper into the material without any additional force being applied; these mark the onset of the elastic–plastic transition6, 7, 8, 9, 10, 11. Here, we report the observation of a current spike—a sharp increase in electrical current followed by immediate decay to zero at the end of the elastic deformation—during the nanoscale deformation of gallium arsenide. Such a spike has not been seen in previous nanoindentation experiments on semiconductors1, 2, 3, 4, 5, and our results, supported by ab initio calculations, suggest a common origin for the electrical and mechanical responses of nanodeformed gallium arsenide. This leads us to the conclusion that a phase transition is the fundamental cause of nanoscale plasticity in gallium arsenide12, and the discovery calls for a revision of the current dislocation-based understanding of nanoscale plasticity6, 7, 8, 9, 10, 11.
- Nordic Hysitron Laboratory, Helsinki University of Technology, Espoo, Vuorimiehentie 2A, FI-02015 TKK, Finland
- Mechanical System Engineering, Hiroshima University, 1-4-1 Kagamiyama, Higashi-Hiroshima, 739-8511 Japan
- Institute of Materials Science, University of Silesia, Bankowa 12, 40-007 Katowice, Poland
- Hysitron, Inc., 10025 Valley View Road, Minneapolis, Minnesota 55344, USA
- Optoelectronics Research Centre, Tampere University of Technology, 33101 Tampere, Finland
- These authors contributed equally to this work
Correspondence to: Roman Nowak1,2,6 e-mail: rnowak@cc.hut.fi
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