Letter abstract
Nature Nanotechnology 3, 402 - 407 (2008)
Published online: 15 June 2008 | doi:10.1038/nnano.2008.161
Subject Categories: Electronic properties and devices | Synthesis and processing
Individually addressable epitaxial ferroelectric nanocapacitor arrays with near Tb inch-2 density
Woo Lee1,3, Hee Han2, Andriy Lotnyk1, Markus Andreas Schubert1, Stephan Senz1, Marin Alexe1, Dietrich Hesse1, Sunggi Baik2 & Ulrich Gösele1
Abstract
Ferroelectric materials have emerged in recent years as an alternative to magnetic and dielectric materials for nonvolatile data-storage applications1, 2, 3, 4, 5. Lithography is widely used to reduce the size of data-storage elements in ultrahigh-density memory devices6, 7, 8, 9. However, ferroelectric materials tend to be oxides with complex structures that are easily damaged by existing lithographic techniques, so an alternative approach is needed to fabricate ultrahigh-density ferroelectric memories. Here we report a high-temperature deposition process that can fabricate arrays of individually addressable metal/ferroelectric/metal nanocapacitors with a density of 176 Gb inch-2. The use of an ultrathin anodic alumina membrane as a lift-off mask makes it possible to deposit the memory elements at temperatures as high as 650 °C, which results in excellent ferroelectric properties.
- Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle, Germany
- Department of Materials Science & Engineering, Pohang University of Science and Technology, San 31, Hyoja-dong, 790-784 Pohang, Korea
- Korea Research Institute of Standards and Science (KRISS), Yuseong, 305-340 Daejon, Korea
Correspondence to: Woo Lee1,3 e-mail: woolee@kriss.re.kr
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