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Silicon nanowires feel the pinch

Nature Nanotechnology volume 3, pages 311–312 (2008)Cite this article

To the Editor

Rongrui He and Peidong Yang have reported giant uniaxial piezoresistance in p-type silicon nanowires that is almost two orders of magnitude larger than that found in bulk silicon1. Here, I show that a stress-induced modulation of the surface depletion region width can explain these results.

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Figure 1: The piezo-pinch effect in silicon nanowires.

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Acknowledgements

This work was supported by the Agence National de la Recherche (ANR-06-NANO-037-01). The author acknowledges useful discussions with F. Ozanam.

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  1. Physique de la Matière Condensée, Ecole Polytechnique, CNRS, Palaiseau, 91128, France

    Alistair C. H. Rowe

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  1. Alistair C. H. Rowe
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Rowe, A. Silicon nanowires feel the pinch. Nature Nanotech 3, 311–312 (2008). https://doi.org/10.1038/nnano.2008.108

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