Letter abstract
Nature Nanotechnology 3, 270 - 274 (2008)
Published online: 6 April 2008 | doi:10.1038/nnano.2008.83
Subject Categories: Electronic properties and devices | Photonic structures and devices | Synthesis and processing
Large-area ultrathin films of reduced graphene oxide as a transparent and flexible electronic material
Goki Eda1, Giovanni Fanchini1 & Manish Chhowalla1
Abstract
The integration of novel materials such as single-walled carbon nanotubes and nanowires into devices has been challenging, but developments in transfer printing and solution-based methods now allow these materials to be incorporated into large-area electronics1, 2, 3, 4, 5, 6. Similar efforts are now being devoted to making the integration of graphene into devices technologically feasible7, 8, 9, 10. Here, we report a solution-based method that allows uniform and controllable deposition of reduced graphene oxide thin films with thicknesses ranging from a single monolayer to several layers over large areas. The opto-electronic properties can thus be tuned over several orders of magnitude, making them potentially useful for flexible and transparent semiconductors or semi-metals. The thinnest films exhibit graphene-like ambipolar transistor characteristics, whereas thicker films behave as graphite-like semi-metals. Collectively, our deposition method could represent a route for translating the interesting fundamental properties of graphene into technologically viable devices.
- Materials Science and Engineering, Rutgers University, 607 Taylor Road, Piscataway, New Jersey 08854, USA
Correspondence to: Manish Chhowalla1 e-mail: manish1@rci.rutgers.edu
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