Letter abstract
Nature Nanotechnology 3, 603 - 608 (2008)
Published online: 14 September 2008 | doi:10.1038/nnano.2008.267
Subject Categories: Electronic properties and devices | Nanoparticles | Synthesis and processing
CMOS-compatible fabrication of room-temperature single-electron devices
Vishva Ray1, Ramkumar Subramanian1, Pradeep Bhadrachalam1, Liang-Chieh Ma1, Choong-Un Kim1 & Seong Jin Koh1
Abstract
Devices in which the transport and storage of single electrons are systematically controlled could lead to a new generation of nanoscale devices and sensors1, 2, 3. The attractive features of these devices include operation at extremely low power, scalability to the sub-nanometre regime and extremely high charge sensitivity4, 5, 6, 7, 8, 9. However, the fabrication of single-electron devices requires nanoscale geometrical control, which has limited their fabrication to small numbers of devices at a time9, 10, 11, 12, 13, 14, 15, significantly restricting their implementation in practical devices. Here we report the parallel fabrication of single-electron devices, which results in multiple, individually addressable, single-electron devices that operate at room temperature. This was made possible using CMOS fabrication technology and implementing self-alignment of the source and drain electrodes, which are vertically separated by thin dielectric films. We demonstrate clear Coulomb staircase/blockade and Coulomb oscillations at room temperature and also at low temperatures.
- Department of Materials Science and Engineering, The University of Texas at Arlington, Arlington, Texas 76019, USA
Correspondence to: Seong Jin Koh1 e-mail: skoh@uta.edu
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