Article abstract
Nature Nanotechnology 2, 500 - 506 (2007)
Published online: 3 August 2007 | doi:10.1038/nnano.2007.227
Subject Categories: Molecular self-assembly | Surface patterning and imaging
Assembly of aligned linear metallic patterns on silicon
Jinan Chai1,2, Dong Wang1, Xiangning Fan1,3 & Jillian M. Buriak1,3
Abstract
In order to harness the potential of block copolymers to produce nanoscale structures that can be integrated with existing silicon-based technologies, there is a need for compatible chemistries. Block copolymer nanostructures can form a wide variety of two-dimensional patterns, and can be controlled to present long-range order. Here we use the acid-responsive nature of self-assembled monolayers of aligned, horizontal block copolymer cylinders for metal loading with simple aqueous solutions of anionic metal complexes, followed by brief plasma treatment to simultaneously remove the block copolymer and produce metallic nanostructures. Aligned lines of metal with widths on the order of 10 nm and less are efficiently produced by means of this approach on Si(100) interfaces. The method is highly versatile because the chemistry to manipulate nanowire composition, structure and choice of semiconductor is under the control of the user.
- National Institute for Nanotechnology (NINT), National Research Council, 11421 Saskatchewan Drive, Edmonton, Alberta T6G 2M9, Canada
- Department of Mechanical Engineering, University of Alberta, Edmonton, Alberta T6G 2G8, Canada
- Department of Chemistry, University of Alberta, Edmonton, Alberta T6G 2G2, Canada
Correspondence to: Jillian M. Buriak1,3 e-mail: jburiak@ualberta.ca
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