Article abstract


Nature Nanotechnology 2, 230 - 236 (2007)
Published online: 25 March 2007 | doi:10.1038/nnano.2007.77

Subject Categories: Carbon nanotubes and fullerenes | Electronic properties and devices

High-performance electronics using dense, perfectly aligned arrays of single-walled carbon nanotubes

Seong Jun Kang1,10, Coskun Kocabas2,10, Taner Ozel2, Moonsub Shim1,7, Ninad Pimparkar8, Muhammad A. Alam8, Slava V. Rotkin9 & John A. Rogers1,3,4,5,6,7


Single-walled carbon nanotubes (SWNTs) have many exceptional electronic properties. Realizing the full potential of SWNTs in realistic electronic systems requires a scalable approach to device and circuit integration. We report the use of dense, perfectly aligned arrays of long, perfectly linear SWNTs as an effective thin-film semiconductor suitable for integration into transistors and other classes of electronic devices. The large number of SWNTs enable excellent device-level performance characteristics and good device-to-device uniformity, even with SWNTs that are electronically heterogeneous. Measurements on p- and n-channel transistors that involve as many as approx2,100 SWNTs reveal device-level mobilities and scaled transconductances approaching approx1,000 cm2  V-1 s-1 and  approx 3,000 S m-1, respectively, and with current outputs of up to approx1 A in devices that use interdigitated electrodes. PMOS and CMOS logic gates and mechanically flexible transistors on plastic provide examples of devices that can be formed with this approach. Collectively, these results may represent a route to large-scale integrated nanotube electronics.

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  1. Department of Materials Science and Engineering, University of Illinois at Urbana Champaign, Urbana, Illinois 61801, USA
  2. Department of Physics, University of Illinois at Urbana Champaign, Urbana, Illinois 61801, USA
  3. Department of Mechanical Science and Engineering, University of Illinois at Urbana Champaign, Urbana, Illinois 61801, USA
  4. Department of Electrical and Computer Engineering, University of Illinois at Urbana Champaign, Urbana, Illinois 61801, USA
  5. Department of Chemistry, University of Illinois at Urbana Champaign, Urbana, Illinois 61801, USA
  6. Beckman Institute for Advanced Science and Technology, University of Illinois at Urbana Champaign, Urbana, Illinois 61801, USA
  7. Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana Champaign, Urbana, Illinois 61801, USA
  8. School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907-1285, USA
  9. Department of Physics and Center for Advanced Materials and Nanotechnology, Lehigh University, Bethlehem, Pennsylvania 18015, USA
  10. These authors contributed equally to this work.

Correspondence to: John A. Rogers1,3,4,5,6,7 e-mail: jrogers@uiuc.edu

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