Letter abstract
Nature Nanotechnology 2, 761 - 764 (2007)
Published online: 25 November 2007 | doi:10.1038/nnano.2007.378
Subject Categories: Electronic properties and devices | Structural properties
Molecular beam epitaxy growth of free-standing plane-parallel InAs nanoplates
Martin Aagesen1,2, Erik Johnson1,3, Claus B. Sørensen1, Simon O. Mariager1, Robert Feidenhans'l1, Erdmann Spiecker4, Jesper Nygård1 & Poul Erik Lindelof1
Abstract
Free-standing nanostructures such as suspended carbon nanotubes1, graphene layers2, III-V nanorod photonic crystals3 and three-dimensional structures4 have recently attracted attention because they could form the basis of devices with unique electronic, optoelectronic and electromechanical characteristics. Here we report the growth by molecular beam epitaxy of free-standing nanoplates of InAs that are close to being atomically plane. The structural and transport properties of these semiconducting nanoplates have been examined with scanning electron microscopy, transmission electron microscopy, X-ray diffraction and low-temperature electron transport measurements. The carrier density of the nanoplates can be reduced to zero by applying a voltage to a nearby gate electrode, creating a new type of suspended quantum well that can be used to explore low-dimensional electron transport. The electronic and optical properties of such systems also make them potentially attractive for photovoltaic and sensing applications5.
- Nano-Science Center, Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, DK-2100 Copenhagen, Denmark
- SunFlake A/S, Nano-Science Center, Universitetsparken 5, DK-2100 Copenhagen, Denmark
- Department of Materials Research, Risø National Laboratory, Technical University of Denmark, DK-4000 Roskilde, Denmark
- Faculty of Engineering, Christian-Albrecht-University Kiel, Kaiserstrasse 2, 24143 Kiel, Germany
Correspondence to: Martin Aagesen1,2 e-mail: aagesen@fys.ku.dk
Correspondence to: Poul Erik Lindelof1 e-mail: lindelof@nano.ku.dk
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