Abstract
Spin-based electronics or spintronics relies on the ability to store, transport and manipulate electron spin polarization with great precision1,2,3,4. In its ultimate limit, information is stored in the spin state of a single electron, at which point quantum information processing also becomes a possibility5,6. Here, we demonstrate the manipulation, transport and readout of individual electron spins in a linear array of three semiconductor quantum dots. First, we demonstrate single-shot readout of three spins with fidelities of 97% on average, using an approach analogous to the operation of a charge-coupled device (CCD)7. Next, we perform site-selective control of the three spins, thereby writing the content of each pixel of this ‘single-spin charge-coupled device’. Finally, we show that shuttling an electron back and forth in the array hundreds of times, covering a cumulative distance of 80 μm, has negligible influence on its spin projection. Extrapolating these results to the case of much larger arrays points at a diverse range of potential applications, from quantum information to imaging and sensing.
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Acknowledgements
The authors acknowledge useful discussions with the members of the Delft spin qubit team, sample fabrication by F.R. Braakman and experimental assistance from M. Ammerlaan, A. van der Enden, J. Haanstra, R. Roeleveld, R. Schouten, M. Tiggelman and R. Vermeulen. This work is supported by the Netherlands Organization of Scientific Research (NWO) Graduate Program, the Intelligence Advanced Research Projects Activity (IARPA) Multi-Qubit Coherent Operations (MQCO) Program and the Swiss National Science Foundation.
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T.A.B., M.S. and T.F. performed the experiment and analysed the data. C.R. and W.W. grew the heterostructure. T.A.B., M.S., T.F. and L.M.K.V. contributed to interpretation of the data and commented on the manuscript. T.A.B. and L.M.K.V. wrote the manuscript.
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Baart, T., Shafiei, M., Fujita, T. et al. Single-spin CCD. Nature Nanotech 11, 330–334 (2016). https://doi.org/10.1038/nnano.2015.291
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DOI: https://doi.org/10.1038/nnano.2015.291
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