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A new spin on magnetic memories

Nature Nanotechnology volume 10, pages 187–191 (2015)Cite this article

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Solid-state memory devices with all-electrical read and write operations might lead to faster, cheaper information storage.

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Figure 1: STT-MRAM bit cell.
Figure 2: STT-MRAM electrical characteristics.
Figure 3: Write error rate versus the junction bias voltage.

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Acknowledgements

A.D.K. thanks G. Wolf for comments on the manuscript and for preparing Fig. 2. He acknowledges support from the National Science Foundation, grant number NSF-DMR-1309,202. D.C.W. thanks J. DeBrosse for comments on the manuscript.

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Authors and Affiliations

  1. Andrew D. Kent is in the Department of Physics, New York University, New York, New York 10003, USA,

    Andrew D. Kent

  2. Daniel C. Worledge is at the IBM T. J. Watson Research Center, Yorktown Heights, New York 10598, USA,

    Daniel C. Worledge

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  1. Andrew D. Kent
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Correspondence to Andrew D. Kent or Daniel C. Worledge.

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A.D.K. is the founder of Spin Transfer Technologies.

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Kent, A., Worledge, D. A new spin on magnetic memories. Nature Nanotech 10, 187–191 (2015). https://doi.org/10.1038/nnano.2015.24

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