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Letter
Nature Materials 8, 203–207 (1 March 2009) | doi:10.1038/nmat2382
Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide
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Abstract
Graphene, a single monolayer of graphite, has recently attracted considerable interest owing to its novel magneto-transport properties, high carrier mobility and ballistic transport up to room temperature. It has the potential for technological applications as a successor of silicon in the post Moore|[rsquo]|s law era, as a single-molecule gas sensor, in spintronics, in quantum computing or as a terahertz oscillator.
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