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Letter

Nature Materials 8, 203–207 (1 March 2009) | doi:10.1038/nmat2382

Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide

Konstantin V. Emtsev , Aaron Bostwick , Karsten Horn , Johannes Jobst , Gary L. Kellogg , Lothar Ley , Jessica L. McChesney , Taisuke Ohta , Sergey A. Reshanov , Jonas R|[ouml]|hrl , Eli Rotenberg , Andreas K. Schmid , Daniel Waldmann , Heiko B. Weber & Thomas Seyller

Graphene, a single monolayer of graphite, has recently attracted considerable interest owing to its novel magneto-transport properties, high carrier mobility and ballistic transport up to room temperature. It has the potential for technological applications as a successor of silicon in the post Moore|[rsquo]|s law era, as a single-molecule gas sensor, in spintronics, in quantum computing or as a terahertz oscillator.