Article abstract
Nature Materials 8, 62 - 67 (2009)
Published online: 7 December 2008 | doi:10.1038/nmat2339
Subject Categories: Polymers | Electronic materials | Nanoscale materials
Regular arrays of highly ordered ferroelectric polymer nanostructures for non-volatile low-voltage memories
Zhijun Hu1,2, Mingwen Tian3, Bernard Nysten1,2 & Alain M. Jonas1,2
Abstract
Ferroelectric nanostructures are attracting tremendous interest because they offer a promising route to novel integrated electronic devices such as non-volatile memories and probe-based mass data storage. Here, we demonstrate that high-density arrays of nanostructures of a ferroelectric polymer can be easily fabricated by a simple nano-embossing protocol, with integration densities larger than 33 Gbits inch-2. The orientation of the polarization axis, about which the dipole moment rotates, is simultaneously aligned in plane over the whole patterned region. Internal structural defects are significantly eliminated in the nanostructures. The improved crystal orientation and quality enable well-defined uniform switching behaviour from cell to cell. Each nanocell shows a narrow and almost ideal square-shaped hysteresis curve, with low energy losses and a coercive field of 
10 MV m-1, well below previously reported bulk values. These results pave the way to the fabrication of soft plastic memories compatible with all-organic electronics and low-power information technology.
- Unité de Physique et de Chimie des Hauts Polymères (POLY), Université catholique de Louvain, Place Croix du Sud 1, B-1348 Louvain-la-Neuve, Belgium
- Research Center in Micro- and Nanoscopic Materials and Electronic Devices, CeRMiN, Université catholique de Louvain, Place Croix du Sud 1, B-1348 Louvain-la-Neuve, Belgium
- NT-MDT Europe B. V., De Pinckart 54, 5674 CC, Nuenen, The Netherlands
Correspondence to: Alain M. Jonas1,2 e-mail: alain.jonas@uclouvain.be
MORE ARTICLES LIKE THIS
These links to content published by NPG are automatically generated.
RESEARCH
Supplementary InformationNature Materials Letter (01 Jul 2008)
Two-dimensional ferroelectric filmsNature Letters to Editor (26 Feb 1998)
Diluted magnetic semiconductor devices where magnetism can be controlled by an electric field are of significant interest for applications, as they combine the appealing properties of multiferroics with existing semiconductor technology. By using a ferroelectric polymer as the gate of a transistor device, non-volatile electric control over the magnetism of (Ga,Mn)As has now been achieved. Diluted magnetic semiconductor devices where magnetism can be controlled by an electric field are of significant interest for applications, as they combine the appealing properties of multiferroics with existing semiconductor technology. By using a ferroelectric polymer as the gate of a transistor device, non-volatile electric control over the magnetism of (Ga,Mn)As has now been achieved. Change of sheet resistance andNature Materials Letter (01 Jun 2008)
See all 12 matches for Research
