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Correspondence
Nature Materials 7, 259 - 260 (2008)
doi:10.1038/nmat2154b
Origin of the energy bandgap in epitaxial graphene
S.Y. Zhou1,2, D.A. Siegel1,2, A.V. Fedorov3, F.El Gabaly2, A.K. Schmid2, A.H. Castro Neto4, D.-H. Lee1,2 & A. Lanzara1,2
- Department of Physics, University of California, Berkeley, California 94720, USA
- Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
- Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
- Department of Physics, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215, USA
Correspondence to: A. Lanzara1,2 e-mail: ALanzara@lbl.gov
We show here that the argument presented by Rotenberg et al. in the preceding comment to account for the energy gap reported by us1 in epitaxial graphene on 6H-SiC is unfounded. In our view, the effects of modulations on the lateral structure of graphene films alone cannot account for the large gap observed in films with single-layer graphene terraces exceeding 150 nm in size.
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