Letter abstract
Nature Materials 7, 125 - 129 (2008)
Published online: 13 January 2008 | doi:10.1038/nmat2098
Subject Categories: Electronic materials | Magnetic materials
Giant spin Hall effect in perpendicularly spin-polarized FePt/Au devices
Takeshi Seki1, Yu Hasegawa1, Seiji Mitani1, Saburo Takahashi1,2, Hiroshi Imamura2,3, Sadamichi Maekawa1,2, Junsaku Nitta4 & Koki Takanashi1
Conversion of charge current into pure spin current and vice versa in non-magnetic semiconductors1, 2, 3, 4, 5 or metals6, 7, 8, which are called the direct and inverse spin Hall effects9, 10, 11, 12, 13, 14, 15, 16 (SHEs), provide a new functionality of materials for future spin-electronic architectures17. Thus, the realization of a large SHE in a device with a simple and practical geometry is a crucial issue for its applications. Here, we present a multi-terminal device with a Au Hall cross and an FePt perpendicular spin injector to detect giant direct and inverse SHEs at room temperature. Perpendicularly magnetized FePt injects or detects perpendicularly polarized spin current without magnetic field, enabling the unambiguous identification of SHEs. The unprecedentedly large spin Hall resistance of up to 2.9 m
is attributed to the large spin Hall angle in Au through the skew scattering mechanism and the highly efficient spin injection due to the well-matched spin resistances of the chosen materials.
- Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
- CREST, Japan Science and Technology Agency, Tokyo 102-0075, Japan
- National Institute of Advanced Industrial Science and Technology, Tsukuba 305-8568, Japan
- Graduate School of Engineering, Tohoku University, Sendai 980-8579, Japan
Correspondence to: Takeshi Seki1 e-mail: go-sai@imr.tohoku.ac.jp
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