Article abstract
Nature Materials 7, 966 - 971 (2008)
Published online: 16 November 2008 | doi:10.1038/nmat2331
Subject Categories: Electronic materials | Semiconductors | Nanoscale materials
Electronic two-terminal bistable graphitic memories
Yubao Li1,3, Alexander Sinitskii1,3 & James M. Tour1,2
Abstract
Transistors are the basis for electronic switching and memory devices as they exhibit extreme reliabilities with on/off ratios of 104–105, and billions of these three-terminal devices can be fabricated on single planar substrates. On the other hand, two-terminal devices coupled with a nonlinear current–voltage response can be considered as alternatives provided they have large and reliable on/off ratios and that they can be fabricated on a large scale using conventional or easily accessible methods. Here, we report that two-terminal devices consisting of discontinuous 5–10 nm thin films of graphitic sheets grown by chemical vapour deposition on either nanowires or atop planar silicon oxide exhibit enormous and sharp room-temperature bistable current–voltage behaviour possessing stable, rewritable, non-volatile and non-destructive read memories with on/off ratios of up to 107 and switching times of up to 1 
s (tested limit). A nanoelectromechanical mechanism is proposed for the unusually pronounced switching behaviour in the devices.
- Departments of Chemistry; Computer Science and Mechanical Engineering and Materials Science and the Smalley Institute for Nanoscale Science and Technology, Rice University, MS 222, 6100 Main Street, Houston, Texas 77005, USA
- These authors contributed equally to this work
Correspondence to: James M. Tour1,2 e-mail: tour@rice.edu
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