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Letter
Nature Materials 6, 352–356 (1 May 2007) | doi:10.1038/nmat1887
Solution-phase deposition and|[nbsp]|nanopatterning of GeSbSe phase-change|[nbsp]|materials
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Abstract
Chalcogenide films with reversible amorphous–crystalline phase transitions have been commercialized as optically rewritable data-storage media, and intensive effort is now focused on integrating them into electrically addressed non-volatile memory devices (phase-change random-access memory or PCRAM). Although optical data storage is accomplished by laser-induced heating of continuous films, electronic memory requires integration of discrete nanoscale phase-change material features with read/write electronics.
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