News and Views

Nature Materials 6, 256 - 257 (2007)
Published online: 11 March 2007 | doi:10.1038/nmat1868

Data storage: Multiferroic memories

J. F. Scott1

  1. J. F. Scott is in the Earth Sciences Department of Cambridge University, Cambridge CB2 3EQ, UK. e-mail: jsco99@esc.cam.ac.uk

Multiferroics might hold the future for the ultimate memory device. The demonstration of a four-state resistive memory element in a tunnel junction with multiferroic barriers represents a major step in this direction.

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