Letter abstract
Nature Materials 6, 951 - 956 (2007)
Published online: 28 October 2007 | doi:10.1038/nmat2037
Subject Categories: Semiconductors | Optical, photonic and optoelectronic materials | Nanoscale materials
Complete composition tunability of InGaN nanowires using a combinatorial approach
Tevye Kuykendall1, Philipp Ulrich1, Shaul Aloni2 & Peidong Yang1,2
The III nitrides have been intensely studied in recent years because of their huge potential for everything from high-efficiency solid-state lighting and photovoltaics to high-power and temperature electronics1, 2, 3. In particular, the InGaN ternary alloy is of interest for solid-state lighting and photovoltaics because of the ability to tune the direct bandgap of this material from the near-ultraviolet to the near-infrared region. In an effort to synthesize InGaN nitride, researchers have tried many growth techniques4, 5, 6, 7, 8, 9, 10, 11, 12, 13. Nonetheless, there remains considerable difficulty in making high-quality InGaN films and/or freestanding nanowires with tunability across the entire range of compositions. Here we report for the first time the growth of single-crystalline InxGa1-xN nanowires across the entire compositional range from x=0 to 1; the nanowires were synthesized by low-temperature halide chemical vapour deposition9 and were shown to have tunable emission from the near-ultraviolet to the near-infrared region. We propose that the exceptional composition tunability is due to the low process temperature and the ability of the nanowire morphology to accommodate strain-relaxed growth14, which suppresses the tendency toward phase separation that plagues the thin-film community.
- Department of Chemistry, University of California, Berkeley, California 94720, USA
- Molecular Foundry, Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
Correspondence to: Peidong Yang1,2 e-mail: p_yang@berkeley.edu
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