Article abstract


Nature Materials 5, 383 - 387 (2006)
doi:10.1038/nmat1627

Subject Categories: Semiconductors | Optical, photonic and optoelectronic materials | Surface and thin films

Ultra-high-density phase-change storage and memory

Hendrik F. Hamann, Martin O'Boyle, Yves C. Martin, Michael Rooks and H. Kumar Wickramasinghe1


Phase-change storage is widely used in optical information technologies (DVD, CD-ROM and so on), and recently it has also been considered for non-volatile memory applications. This work reports advances in thermal data recording of phase-change materials. Specifically, we show erasable thermal phase-change recording at a storage density of 3.3 Tb inch-2, which is three orders of magnitude denser than that currently achievable with commercial optical storage technologies. We demonstrate the concept of a thin-film nanoheater to realize ultra-small heat spots with dimensions of less than 50 nm. Finally, we show in a proof-of-concept demonstration that an individual thin-film heater can write, erase and read the phase of these storage materials at competitive speeds. This work provides important stepping stones for a very-high-density storage or memory technology based on phase-change materials.

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  1. IBM T.J. Watson Research Center, Yorktown Heights, New York 10598, USA
  2. Present address: IBM Almaden Research Center, San Jose, California 95120, USA

Correspondence to: Hendrik F. Hamann e-mail: hendrikh@us.ibm.com

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