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A sound barrier for silicon?

Abstract

For the first time in thirty five years, the clockspeed of the fastest commercial computer chips has not increased. Is the semiconductor industry just pausing for breath or about to suffer a fate similar to that of aerospace?

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Figure 1: A 'sound barrier' for silicon? The top clockspeed of Intel microprocessors as a function of time (data summarized from Intel's website).
Figure 2: The importance of the gate-oxide thickness.
Figure 3: Cruising speed (in miles per hour) of commercial19 and military aircraft20.

References

  1. Moore, G. Cramming more components onto integrated circuits. Electronics 38, 144–117 (1965).

    Google Scholar 

  2. Moore, G. in IEEE International Solid-State Circuits Conference Vol. 1, 20–23 (IEEE, San Francisco, 2003).

    Google Scholar 

  3. http://www.intel.com/technology/silicon/mooreslaw/

  4. Dennard, R. et al. design of ion-implanted MOSFET's with very small physical dimensions. IEEE J. Solid-State Circuits 9, 256–268 (1974).

    Article  Google Scholar 

  5. Sze, S. M. Semiconductor Devices: Physics and Technology (Wiley, New York, 1985).

    Google Scholar 

  6. Muller, D. A. et al. The electronic structure at the atomic scale of ultra-thin gate oxides. Nature 399, 758–761 (1999).

    Article  CAS  Google Scholar 

  7. Mahajan, R. et al. Emerging directions for packaging technologies. Intel Technol. J. 6, 62–75 (2002).

    Google Scholar 

  8. Nowak, E. J. Maintaining the benefits of CMOS scaling when scaling bogs down. IBM J. Res. Dev. 46, 169–180 (2002).

    Article  Google Scholar 

  9. Doyle, B. et al. Transistor elements for 30nm physical gate lengths and beyond. Intel Technol. J. 6, 42–54 (2002).

    Google Scholar 

  10. Wallace, R. M. & Wilk, G. D. Alternative gate dielectrics for microelectronics. Mater. Res. Soc. Bull. 27, 186–191 (2002).

    Article  Google Scholar 

  11. Semiconductor Industry Association International Technology Roadmap for Semiconductors, Update (2000); see http://public.itrs.net/Files/2000UpdateFinal/2kUdFinal.htm.

  12. Chau, R. et al. Benchmarking nanotechnology for high-performance and low-power logic transistor applications. IEEE Trans. Nanotechnol. 4, 153–158 (2005).

    Article  Google Scholar 

  13. Hiremane, R. From Moore's law to Intel innovation—prediction to reality. Intel Mag. 1–9 (April 2005).

  14. Markoff, J. in New York Times C3 (New York, 7 February 2005).

    Google Scholar 

  15. Horiguchi, S., Kobayashi, T., Miyake, M., Oda, M. & Kiuchi, K. Extremely high transconductance (above 500 mS/mm) MOSFET with 2.5 nm gate oxide. IEDM Tech. Dig. 761–773 (1985).

  16. Momose, H. S. et al. 1.5 nm direct-tunneling gate oxide Si MOSFETs. IEEE Trans. Elec. Dev. 43, 1233–1242 (1996).

    Article  Google Scholar 

  17. Chau, R. et al. High-k/metal gate stack and its MOSFETs characteristics. IEEE Elect. Dev. Lett. 25, 408–410 (2004).

    Article  CAS  Google Scholar 

  18. Thompson, S. et al. 130nm logic technology featuring 60nm transistors, low-k dielectrics, and Cu interconnects. Intel Technol. J. 6, 5–13 (2002).

    Google Scholar 

  19. The History of United Airlines http://www.united.com/page/middlepage/0,6823,2286,00.html.

  20. National Museum of the United States Airforce; www.wpafb.af.mil.museum.htm.

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Muller, D. A sound barrier for silicon?. Nature Mater 4, 645–647 (2005). https://doi.org/10.1038/nmat1466

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