Article abstract
Nature Materials 3, 317 - 322 (2004)
doi:10.1038/nmat1105
Subject Categories: Polymers | Electronic materials | Molecular electronics
Control of carrier density by self-assembled monolayers in organic field-effect transistors
S. Kobayashi1,2, T. Nishikawa3,4, T. Takenobu1,2, S. Mori1, T. Shimoda3,4, T. Mitani4, H. Shimotani1,2, N. Yoshimoto5, S. Ogawa6 and Y. Iwasa1,2
Abstract
Organic thin-film transistors are attracting a great deal of attention due to the relatively high field-effect mobility in several organic materials. In these organic semiconductors, however, researchers have not established a reliable method of doping at a very low density level, although this has been crucial for the technological development of inorganic semiconductors. In the field-effect device structures, the conduction channel exists at the interface between organic thin films and SiO2 gate insulators. Here, we discuss a new technique that enables us to control the charge density in the channel by using organosilane self-assembled monolayers (SAMs) on SiO2 gate insulators. SAMs with fluorine and amino groups have been shown to accumulate holes and electrons, respectively, in the transistor channel: these properties are understood in terms of the effects of electric dipoles of the SAMs molecules, and weak charge transfer between organic films and SAMs.
- Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
- CREST, Japan Science and Technology Corporation, Kawaguchi 333-0012, Japan
- Technology Platform Research Center, SEIKO EPSON Corporation, Fujimi, Nagano 399-0293, Japan
- Japan Advanced Institute of Science and Technology, Tatsunokuchi, Ishikawa 923-1292, Japan
- Department of Materials Science and Engineering, Iwate University, Ueda, Morioka 020-8551, Japan
- Department of Chemical Engineering, Iwate University, Ueda, Morioka 020-8551, Japan
Correspondence to: Y. Iwasa1,2 e-mail: iwasa@imr.edu
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