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Nature Materials 3, 81 - 82 (2004)
doi:10.1038/nmat1067
Ferroelectrics: Pushing towards the digital storage limit
Rainer Waser1,2 and Andreas Rüdiger1
- Center of Nanoelectronic Systems for Information Technology (CNI), Department IFF, Forschungszentrum Jülich, D-52425 Jülich, Germany. e-mail: R.Waser@fz-juelich.de; e-mail: A.Ruediger@fz-juelich.de
- Institute of Materials in Electrical Engineering and Information Technology 2 (IWE2), RWTH Aachen University, D-52056 Aachen, Germany.
Abstract
Ferroelectric materials promise computer memories with the speed of random access memories and the permanence of hard discs. But how will the microstructure of these materials influence the ultimate performance of ferroelectric memories?
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