News and Views
Nature Materials 3, 845 - 847 (2004)
doi:10.1038/nmat1272
Magnetic memory: A signal boost is in order
William H. Butler1 and Arunava Gupta1
- William H. Butler and Arunava Gupta are at the University of Alabama, Center for Materials for Information Technology, Tuscaloosa, Alabama 35487, USA.
Correspondence to: Arunava Gupta1 e-mail: agupta@mint.ua.edu
Abstract
Magnetic random-access memory (MRAM) has been touted as a universal memory with a wide range of potential applications in portable computers, consumer electronics and wireless devices. The use of certain combinations of materials that can now be deposited as thin-film layers with excellent crystalline order provides a significantly larger signal in the devices, and is expected to help advance the commercialization of MRAM.
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