Skip to main content

Thank you for visiting nature.com. You are using a browser version with limited support for CSS. To obtain the best experience, we recommend you use a more up to date browser (or turn off compatibility mode in Internet Explorer). In the meantime, to ensure continued support, we are displaying the site without styles and JavaScript.

  • News & Views
  • Published:

2D crystal semiconductors

Intimate contacts

Nature Materials volume 13, pages 1076–1078 (2014)Cite this article

Subjects

High electrical contact resistance had stalled the promised performance of two-dimensional layered devices. Low-resistance metal–semiconductor contacts are now obtained by interfacing semiconducting MoS2 layers with the metallic phase of this material.

This is a preview of subscription content, access via your institution

Relevant articles

Open Access articles citing this article.

Access options

Buy this article

  • Purchase on Springer Link
  • Instant access to full article PDF
Buy now

Prices may be subject to local taxes which are calculated during checkout

Figure 1: Contact resistances for various semiconductor materials against the quantum limits for crystalline materials.

References

  1. Radisavlejevic, B., Radenovic, A., Brivio, J., Giacometti, V. & Kis, A. Nature Nanotech. 6, 147–150 (2011).

    Article  Google Scholar 

  2. Kappera, R. et al. Nature Mater. 13, 1128–1134 (2014).

    Article  CAS  Google Scholar 

  3. Lin, Y.-C., Dumnenco, D. O., Huang, Y.-S. & Suenaga, K. Nature Nanotech. 9, 391–396 (2014).

    Article  CAS  Google Scholar 

  4. Maxwell, J. C. A Treatise on Electricity and Magnetism (Clarendon, 1904).

    Google Scholar 

  5. Landauer, R. IBM J. Res. Dev. 1, 223–231 (1957).

    Article  Google Scholar 

  6. Sharvin, Y. V. Sov. Phys. JETP 21, 655–656 (1965).

    Google Scholar 

  7. Datta, S., Assad, F. & Lundstrom, M. S. Superlattices Microstructures 23, 771–780 (1998).

    Article  CAS  Google Scholar 

  8. Van Wees, B. et al. Phys. Rev. Lett. 60, 848–850 (1988).

    Article  CAS  Google Scholar 

  9. Maassen, J., Jeong, C., Baraskar, A., Rodwell, M. & Lundstrom, M. Appl. Phys. Lett. 102, 111605 (2013).

    Article  Google Scholar 

  10. Yang, L. et al. VLSI Technol. Digest of Tech. Papers, 2014 Symposium on, 238–239 (2014); http:dx.doi.org/10.1109/VLSIT.2014.6894432

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. Depdeep Jena and Grace Huili Xing are in the Department of Electrical Engineering, and in the Department of Electrical and Computer Engineering, and Department of Materials Science & Engineering, University of Notre Dame, Indiana 46556, USA, Cornell University, New York 14853, USA,

    Grace Huili Xing

  2. Kaustav Banerjee is in the Department of Electrical and Computer Engineering, University of California, Santa Barbara, California 93106, USA,

    Kaustav Banerjee

  3. Debdeep Jena

Authors
  1. Debdeep Jena
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Kaustav Banerjee
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Grace Huili Xing
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Debdeep Jena.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Jena, D., Banerjee, K. & Xing, G. Intimate contacts. Nature Mater 13, 1076–1078 (2014). https://doi.org/10.1038/nmat4121

Download citation

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1038/nmat4121

This article is cited by

Search

Advanced search

Quick links

Nature Briefing

Sign up for the Nature Briefing newsletter — what matters in science, free to your inbox daily.

Get the most important science stories of the day, free in your inbox. Sign up for Nature Briefing