Article abstract
Nature Materials 1, 241 - 246 (2002)
Published online: 17 November 2002 | doi:10.1038/nmat769
Subject Categories: Molecular electronics | Nanoscale materials | Surface and thin films
High-
dielectrics for advanced carbon-nanotube transistors and logic gates
Ali Javey1, Hyoungsub Kim2, Markus Brink3, Qian Wang1, Ant Ural1, Jing Guo4, Paul McIntyre2, Paul McEuen3, Mark Lundstrom4 & Hongjie Dai1
Abstract
The integration of materials having a high dielectric constant (high-
) into carbon-nanotube transistors promises to push the performance limit for molecular electronics. Here, high- (
25) zirconium oxide thin-films (8 nm) are formed on top of individual single-walled carbon nanotubes by atomic-layer deposition and used as gate dielectrics for nanotube field-effect transistors. The p-type transistors exhibit subthreshold swings of S 70 mV per decade, approaching the room-temperature theoretical limit for field-effect transistors. Key transistor performance parameters, transconductance and carrier mobility reach 6,000 S m-1 (12 
S per tube) and 3,000 cm2 V-1 s-1 respectively. N-type field-effect transistors obtained by annealing the devices in hydrogen exhibit S 90 mV per decade. High voltage gains of up to 60 are obtained for complementary nanotube-based inverters. The atomic-layer deposition process affords gate insulators with high capacitance while being chemically benign to nanotubes, a key to the integration of advanced dielectrics into molecular electronics.
- Department of Chemistry, Stanford University, California 94305, USA
- Department of Materials Science and Engineering, Stanford University, California 94305, USA
- Department of Physics, Cornell University, Ithaca, New York 14853, USA
- School of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907, USA
Correspondence to: Hongjie Dai1 e-mail: hdai1@stanford.edu
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