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Nature Chemistry (17 October 2008) | doi:10.1038/nchem.77

Lithography: Polymer patterns go square

Neil Withers

Consumer demand for smaller and faster microelectronics is driving improvements in the photolithographic techniques used to create integrated circuits of metal oxide semiconductors, but this is expected to reach a lower size limit of 30 nm. Improvements beyond this could be reached by block-copolymer lithography, with feature sizes of 10–30 nm that are controlled by molecular weight.