15
May 2003
Materials science: Atomic-scale metrology
Advances in the spatial resolution of microscopes attract considerable excitement. But even more important when it comes to solving problems in materials science is the retrieval of useful structural information on the atomic scale. Using high-resolution electron microscopy and optical interferometry, Hÿtch et al. measure displacements in an atomic lattice to an accuracy of 0.01 Å, over 100 times the resolution of the microscope used. The target for this experiment was edge dislocation in silicon. As silicon and other materials are increasingly used in nanostructured materials, the use of electron microscopy to measure stresses and strains is likely to become increasingly important.
Measurement of the displacement field of dislocations
to 0.03 Å by electron microscopy
MARTIN J.
HŸTCH, JEAN-LUC PUTAUX & JEAN-MICHEL P�NISSON
Nature 423,
270–273 (2003); doi:10.1038/nature01638
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