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Nature 460, 81-84 (31 May 2009) | doi:10.1038/nature08128;
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Giant tunnel electroresistance for non-destructive readout of ferroelectric states
Ferroelectrics possess a polarization that is spontaneous, stable and electrically switchable, and submicrometre-thick ferroelectric films are currently used as non-volatile memory elements with destructive capacitive readout. Memories based on tunnel junctions with ultrathin ferroelectric barriers would enable non-destructive resistive readout.
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