FIGURE 3. Data from evaluating the performance of the 128 ebits within the crossbar memory circuit.
From the following article:
A 160-kilobit molecular electronic memory patterned at 1011 bits per square centimetre
Jonathan E. Green, Jang Wook Choi, Akram Boukai, Yuri Bunimovich, Ezekiel Johnston-Halperin, Erica DeIonno, Yi Luo, Bonnie A. Sheriff, Ke Xu, Young Shik Shin, Hsian-Rong Tseng, J. Fraser Stoddart & James R. Heath
Nature 445, 414-417(25 January 2007)
doi:10.1038/nature05462
a, The current ratio of the 1 state divided by the 0 state of the tested ebits. Note that many of the ebits exhibit little to no switching response. Those ebits are defective. b, A map of the defective and useable ebits, along with a pie-chart giving the testing statistics. Note that, except for the bad Si nanowire contacts on bottom electrodes B1 and B6, and the shorted top electrodes T2 and T3, the defective and good bits are randomly distributed. Poor switch defects are poorly switching or non-switching ebits that either exhibited an open-circuit conductance (26% of all ebits tested) or a conductance similar to that of a closed bit (22% of all ebits tested).