Letter
Nature 437, 393-395 (15 September 2005) | doi:10.1038/nature04036; Received 31 May 2005; ; Accepted 13 July 2005
Phase-locking in double-point-contact spin-transfer devices
F. B. Mancoff1, N. D. Rizzo1, B. N. Engel1 and S. Tehrani1
Spin-transfer1, 2 in nanometre-scale magnetic devices results from the torque on a ferromagnet owing to its interaction with a spin-polarized current and the electrons' spin angular momentum. Experiments have detected either a reversal3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16 or high-frequency (GHz) steady-state precession17, 18, 19, 20, 21, 22, 23 of the magnetization in giant magnetoresistance spin valves and magnetic tunnel junctions with current densities of more than 107 A cm-2. Spin-transfer devices may enable high-density, low-power magnetic random access memory24, 25 or direct-current-driven nanometre-sized microwave oscillators. Here we show that the magnetization oscillations induced by spin-transfer in two 80-nm-diameter giant-magnetoresistance point contacts in close proximity to each other can phase-lock into a single resonance over a frequency range from approximately <10 to >24 GHz for contact spacings of less than about
200 nm. The output power from these contact pairs with small spacing is approximately twice the total power from more widely spaced (
400 nm and greater) contact pairs that undergo separate resonances, indicating that the closely spaced pairs are phase-locked with zero phase shift. Phase-locking may enable control of large arrays of coupled spin-transfer devices with increased power output for microwave oscillator applications.
- Technology Solutions Organization, Freescale Semiconductor Inc., Chandler, Arizona 85224, USA
Correspondence to: F. B. Mancoff1 Correspondence and requests for materials should be addressed to F.B.M. (Email: fred.mancoff@freescale.com).
Received 31 May 2005 | Accepted 13 July 2005
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