Access
To read this story in full you will need to login or make a payment (see right).
News and Views
Nature 431, 640-641 (7 October 2004) | doi:10.1038/431640a; Published online 6 October 2004
Open Innovation Challenges
- More Challenges
- Powered by:
nature jobs
Tenure-track Faculty Positions
- University of Michigan
- Ann Arbor, Michigan, USA
Laboratory Technician (Pharmaceutical Analysis & Quality Control)
- Alliance Institute of Advanced Pharmacy and Health Sciences
- Hyderabad 500038 India
Materials physics: Doping control for nanotubes
Reshef Tenne1
Abstract
Adding guest atoms to inorganic nanotubes, known as 'doping', influences their room-temperature magnetic properties — properties that could be exploited in 'spintronic' devices and computer memory.
Much of the technology underlying our computers and electronic devices is based on the transport of electronic charge across sub-micrometre structures made from perfectly crystalline silicon. The dimensions of silicon-based devices, transistors in particular, are constantly shrinking (90-nm transistor gates are now in production) and their integration densities are increasing — in line with Moore's law, which predicts at least a doubling of the transistor density on a chip every two years.
- Reshef Tenne is in the Department of Materials and Interfaces, Weizmann Institute of Science, Rehovot 76100, Israel.
Email: reshef.tenne@weizmann.ac.il
To read this story in full you will need to login or make a payment (see right).
MORE ARTICLES LIKE THIS
These links to content published by NPG are automatically generated.
RESEARCH
Room-temperature ferromagnetic nanotubes controlled by electron or hole dopingNature Letters to Editor (07 Oct 2004)
