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Nature 431, 640-641 (7 October 2004) | doi:10.1038/431640a; Published online 6 October 2004
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30 Doctoral Stipends for Outstanding Young Researchers
- Christian-Albrechts-Universitat zu Kiel
- Kiel, Germany
Manager-SCI
- Indegene Lifesystems Pvt. Ltd
- Bengaluru 560 071 India
Materials physics: Doping control for nanotubes
Reshef Tenne1
Abstract
Adding guest atoms to inorganic nanotubes, known as 'doping', influences their room-temperature magnetic properties — properties that could be exploited in 'spintronic' devices and computer memory.
Much of the technology underlying our computers and electronic devices is based on the transport of electronic charge across sub-micrometre structures made from perfectly crystalline silicon. The dimensions of silicon-based devices, transistors in particular, are constantly shrinking (90-nm transistor gates are now in production) and their integration densities are increasing — in line with Moore's law, which predicts at least a doubling of the transistor density on a chip every two years.
- Reshef Tenne is in the Department of Materials and Interfaces, Weizmann Institute of Science, Rehovot 76100, Israel.
Email: reshef.tenne@weizmann.ac.il
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RESEARCH
Room-temperature ferromagnetic nanotubes controlled by electron or hole dopingNature Letters to Editor (07 Oct 2004)
