1. Vereshchagin Institute for High Pressure Physics, Russian Academy of Sciences, 142190 Troitsk, Moscow region, Russia
2. Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
3. Lebedev Physics Institute, Russian Academy of Sciences, 117924 Moscow, Russia

Correspondence to: V. A. Sidorov¹ Email: sidorov@hppi.troitsk.ru

Abstract

Diamond is an electrical insulator well known for its exceptional hardness. It also conducts heat even more effectively than copper, and can withstand very high electric fields¹. With these physical properties, diamond is attractive for electronic applications², particularly when charge carriers are introduced (by chemical doping) into the system. Boron has one less electron than carbon and, because of its small atomic radius, boron is relatively easily incorporated into diamond³; as boron acts as a charge acceptor, the resulting diamond is effectively hole-doped. Here we report the discovery of superconductivity in boron-doped diamond synthesized at high pressure (nearly 100,000 atmospheres) and temperature (2,500–2,800 K). Electrical resistivity, magnetic susceptibility, specific heat and field-dependent resistance measurements show that boron-doped diamond is a bulk, type-II superconductor below the superconducting transition temperature T_c 4 K; superconductivity survives in a magnetic field up to H_c2(0) 3.5 T. The discovery of superconductivity in diamond-structured carbon suggests that Si and Ge, which also form in the diamond structure, may similarly exhibit superconductivity under the appropriate conditions.

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