Figures and Tables

From the following article:

Current-induced domain-wall switching in a ferromagnetic semiconductor structure

M. Yamanouchi, D. Chiba, F. Matsukura and H. Ohno

Nature 428, 539-542(1 April 2004)

doi:10.1038/nature02441

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Figure 1 - Unfortunately we are unable to provide accessible alternative text for this. If you require assistance to access this image, or to obtain a text description, please contact npg@nature.com

Figure 1

A micrograph and a schematic drawing of the device.

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Figure 2

The hysteresis loops of regions I, II and III, of sample A measured by RHall at 83 K, and the temperature and the current dependence of the averaged saturated Hall resistance, RHall, sat.

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Figure 3

The effect of successive alternating negative and positive current pulses on RHall for regions I, II and III of sample A.

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Figure 4

MOKE images of sample A using 546-nm light at approx80 K.

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