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Semiconductor physics

Electrons in artificial atoms

Nature volume 405, pages 899–900 (2000)Cite this article

With dimensions of only 1 to 100 nanometres and containing somewhere between 103 and 106 atomic nuclei in a crystalline lattice, semiconductor ‘quantum dots’ are often described as artificial, solid-state atoms1. An electron in a quantum dot can be described by a quantum wavefunction that is similar to that used for an electron in a single atom, even though its energy is spread coherently over the lattice of atomic nuclei. The electronic wavefunctions are often labelled with atomic notation (for example, s and p energy levels), yet the quantum dots are very much solid-state nanostructures, which can be tailored into different shapes. On pages 923 and 926 of this issue, Bayer et al.2 and Warburton et al.3 report optical studies of individual quantum dots and ‘quantum rings’. Researchers are fascinated by quantum dots that emit light because such dots are expected to form the basis of a new generation of lasers.

In these studies the semiconductor dots and rings are made from indium arsenide embedded in gallium arsenide. They were grown using techniques developed within the past decade that allow much smaller nanostructures to be created. In these new experiments, electrons are introduced one by one into individual quantum dots while their optical emission is measured with extraordinary precision. Such studies provide new perspectives on the internal quantum-mechanical workings of quantum dots. The ultimate goal is to create useful electronic and optical nanomaterials that have been quantum-mechanically engineered by tailoring the shape, size, composition and position of various quantum dots.

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Figure 1: Energy levels in a semiconductor quantum dot.

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  1. Naval Research Laboratory , Code 6876, Building 208, Room 348, 4555 Overlook Avenue SW , Washington DC, 20375-5347, USA

    Daniel Gammon

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  1. Daniel Gammon
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Correspondence to Daniel Gammon.

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Gammon, D. Electrons in artificial atoms. Nature 405, 899–900 (2000). https://doi.org/10.1038/35016189

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