Original Article

Citation: Light: Science & Applications (2017) 6, e17023; doi:10.1038/lsa.2017.23
Published online 11 August 2017

Ultrasensitive broadband phototransistors based on perovskite/organic-semiconductor vertical heterojunctions

Chao Xie1, Peng You1, Zhike Liu1, Li Li2 and Feng Yan1

  1. 1Department of Applied Physics, The Hong Kong Polytechnic University, Hong Kong 999077, China
  2. 2Institute of Textiles and Clothing, The Hong Kong Polytechnic University, Hong Kong 999077, China

Correspondence: F Yan, Email: apafyan@polyu.edu.hk

Received 11 August 2016; Revised 8 February 2017; Accepted 13 February 2017
Accepted article preview online 22 February 2017



Organolead halide perovskites have emerged as the most promising materials for various optoelectronic devices, especially solar cells, because of their excellent optoelectronic properties. Here, we present the first report of low-voltage high-gain phototransistors based on perovskite/organic-semiconductor vertical heterojunctions, which show ultrahigh responsivities of ~109A W–1 and specific detectivities of ~1014 Jones in a broadband region from the ultraviolet to the near infrared. The high sensitivity of the devices is attributed to a pronounced photogating effect that is mainly due to the long carrier lifetimes and strong light absorption in the perovskite material. In addition, flexible perovskite photodetectors have been successfully prepared via a solution process and show high sensitivity as well as excellent flexibility and bending durability. The high performance and facile solution-based fabrication of the perovskite/organic-semiconductor phototransistors indicate their promise for potential application for ultrasensitive broadband photodetection.


broadband; flexible; organic semiconductor; perovskite; photodetector