Article abstract


Nature Materials 2, 482 - 486 (2003)
doi:10.1038/nmat929

Subject Categories: Semiconductors | Design synthesis and processing

Shallow donors with high n-type electrical conductivity in homoepitaxial deuterated boron-doped diamond layers

Zéphirin Teukam1, Jacques Chevallier1, Cécile Saguy2, Rafi Kalish2, Dominique Ballutaud1, Michel Barbé1, François Jomard1, Annie Tromson-Carli1, Catherine Cytermann2, James E. Butler3, Mathieu Bernard4, Céline Baron4 and Alain Deneuville4


Diamond is a unique semiconductor for the fabrication of electronic and opto-electronic devices because of its exceptional physical and chemical properties. However, a serious obstacle to the realization of diamond-based devices is the lack of n-type diamond with satisfactory electrical properties. Here we show that high-conductivity n-type diamond can be achieved by deuteration of particularly selected homo-epitaxially grown (100) boron-doped diamond layers. Deuterium diffusion through the entire boron-doped layer leads to the passivation of the boron acceptors and to the conversion from highly p-type to n-type conductivity due to the formation of shallow donors with ionization energy of 0.23 eV. Electrical conductivities as high as 2 Omega-1 cm-1 with electron mobilities of the order of a few hundred cm2 V-1 s-1 are measured at 300 K for samples with electron concentrations of several 1016 cm-3. The formation and break-up of deuterium-related complexes, due to some excess deuterium in the deuterated layer, seem to be responsible for the reversible p- to n-type conversion. To the best of our knowledge, this is the first time such an effect has been observed in an elemental semiconductor.

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  1. Laboratoire de Physique des Solides et de Cristallogénèse, UMR CNRS 8635, 1 place A.Briand, 92195 Meudon Cedex, France
  2. Physics Department and Solid State Institute, Technion, Haifa 32000, Israel
  3. Naval Research Laboratory, Code 6174, Washington, DC 20375, USA
  4. Laboratoire d'Etudes des Propriétés Electroniques des Solides, CNRS B.P.166, 38042 Grenoble Cedex 09, France

Correspondence to: Jacques Chevallier1 e-mail: jacques.chevallier@cnrs-bellevue.fr

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