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Nanoelectronics

Single dopants learn their place

Nature Nanotechnology volume 5, pages 100–101 (2010)Cite this article

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The presence of just one dopant atom can dramatically alter the performance of a short-channel transistor, depending on where it is located.

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Figure 1: The transistors made by Sanquer and co-workers1 contain a short silicon channel between source (bottom left) and drain (top right) contacts that contain a high concentration of arsenic dopant atoms (red balls).

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Authors and Affiliations

  1. Sven Rogge is at the Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628 CJ Delft, The Netherlands. s.rogge@tudelft.nl,

    Sven Rogge

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  1. Sven Rogge
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Rogge, S. Single dopants learn their place. Nature Nanotech 5, 100–101 (2010). https://doi.org/10.1038/nnano.2010.11

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