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Nanoelectronics

Crossing boundaries and borders

A Correction to this article was published on 01 October 2009

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Collaborations between academic institutions and industrial companies are increasing across Europe, even though each measures progress on different time scales.

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Figure 1: A nanowire-based vertical field-effect transistor with a metal wrap-around gate.

Change history

  • 07 October 2009

    In the version of this News & Views originally published, the third sentence of the second paragraph should have referred to 'Claire Berger'. This has been corrected in the HTML and PDF versions of the text.

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Feiner, LF. Crossing boundaries and borders. Nature Nanotech 1, 91–92 (2006). https://doi.org/10.1038/nnano.2006.112

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