Abstract
Graphene has attracted considerable interest for future electronics, but the absence of a bandgap limits its direct applicability in transistors and logic devices. Recently, other layered materials such as molybdenum disulphide (MoS2) have been investigated to address this challenge. Here, we report the vertical integration of multi-heterostructures of layered materials for the fabrication of a new generation of vertical field-effect transistors (VFETs) with a room temperature on–off ratio > 103 and a high current density of up to 5,000 A cm−2. An n-channel VFET is created by sandwiching few-layer MoS2 as the semiconducting channel between a monolayer graphene sheet and a metal thin film. This approach offers a general strategy for the vertical integration of p- and n-channel transistors for high-performance logic applications. As an example, we demonstrate a complementary inverter with a larger-than-unity voltage gain by vertically stacking graphene, Bi2Sr2Co2O8 (p-channel), graphene, MoS2 (n-channel) and a metal thin film in sequence. The ability to simultaneously achieve a high on–off ratio, a high current density and a logic function in such vertically stacked multi-heterostructures can open up possibilities for three-dimensional integration in future electronics.
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References
Novoselov, K. S. et al. Electric field effect in atomically thin carbon films. Science 306, 666–669 (2004).
Novoselov, K. S. et al. Two-dimensional gas of massless Dirac fermions in graphene. Nature 438, 197–200 (2005).
Dean, C. R. et al. Boron nitride substrates for high-quality graphene electronics. Nature Nanotech. 5, 722–726 (2010).
Wu, Y. Q. et al. High-frequency, scaled graphene transistors on diamond-like carbon. Nature 472, 74–78 (2011).
Liao, L. et al. High-speed graphene transistors with a self-aligned nanowire gate. Nature 467, 305–308 (2010).
Schwierz, F. Graphene transistors. Nature Nanotech. 5, 487–496 (2010).
Wang, F. et al. Gate-variable optical transitions in graphene. Science 320, 206–209 (2008).
Weiss, N. O. et al. Graphene: An emerging electronic material. Adv. Mater. 24, 5782–5825 (2012).
Han, M. Y., Ozyilmaz, B., Zhang, Y. & Kim, P. Energy band-gap engineering of graphene nanoribbons. Phys. Rev. Lett. 98, 206805 (2007).
Li, X., Wang, X., Zhang, L., Lee, S. & Dai, H. Chemically derived, ultrasmooth graphene nanoribbon semiconductors. Science 319, 1229–1232 (2008).
Bai, J., Duan, X. & Huang, Y. Rational fabrication of graphene nanoribbons Using a nanowire etch mask. Nano Lett. 9, 2083–2087 (2009).
Wang, X. & Dai, H. Etching and narrowing of graphene from the edges. Nature Chem. 2, 661–665 (2010).
Bai, J., Zhong, X., Jiang, S., Huang, Y. & Duan, X. Graphene nanomesh. Nature Nanotech. 5, 190–194 (2010).
Zhang, Y. et al. Direct observation of a widely tunable bandgap in bilayer graphene. Nature 459, 820–823 (2009).
Oostinga, J. B. et al. Gate-induced insulating state in bilayer graphene devices. Nature Mater. 7, 151–157 (2008).
Ohta, T., Bostwick, A., Seyller, Th., Horn, K. & Rotenberg, E. Controlling the electronic structure of bilayer graphene. Science 313, 951–954 (2006).
Xia, F., Farmer, D. B., Lin, Y. & Avouris, Ph. Graphene field-effect transistors with high on–off current ratio and large transport bandgap at room temperature. Nano Lett. 10, 715–718 (2010).
Yu, W. J., Liao, L., Chae, S. H., Lee, Y. H. & Duan, X. Toward tunable bandgap and tunable Dirac point in bilayer graphene with molecular doping. Nano Lett. 11, 4759–4763 (2011).
Elias, D. C. et al. Control of graphene’s properties by reversible hydrogenation: Evidence for graphane. Science 323, 610–613 (2009).
Britnell, L. et al. Field-effect tunneling transistor based on vertical graphene heterostructure. Science 335, 947–950 (2012).
Britnell, L. et al. Electron tunneling through ultrathin boron nitride crystalline barriers. Nano Lett. 12, 1707–1710 (2012).
Yang, H. et al. Graphene barristor, a triode device with a gate-controlled Schottky barrier. Science 336, 1140–1143 (2012).
Li, X. S. et al. Transfer of large-area graphene films for high- performance transparent conductive electrodes. Nano Lett. 9, 4359–4363 (2009).
Bhaviripudi, S., Jia, X. T., Dresselhaus, M. S. & Kong, J. Role of kinetic factors in chemical vapor deposition synthesis of uniform large area graphene using copper catalyst. Nano Lett. 10, 4128–4133 (2010).
Radisavljevic, B., Radenovic, A., Brivio1, J, Giacometti, V. & Kis, A Single-layer MoS2 transistors. Nature Nanotech. 6, 147–150 (2011).
Radisavljevic, B., Whitwick, M. B. & Kis, A. Integrated circuits and logic operations based on single-layer MoS2 . ACS Nano 12, 9934–9938 (2011).
Loeser, A. G. et al. Excitation gap in the normal state of undoped Bi2Sr2CaCu2O8+α . Science 273, 325–329 (1996).
Funahashi, R. & Shikano, M. Bi2Sr2Co2Oy whiskers with high thermoelectric figure of merit. Appl. Phys. Lett. 81, 1459–1461 (2002).
Acknowledgements
We acknowledge the Nanoelectronics Research Facility and the Electron Imaging Center for Nanomachines (EICN) at UCLA for technical support of device fabrication and TEM characterization. We are grateful to I. Terasaki of Nagoya University for providing the BSCO samples. W.J.Y. acknowledges partial support by the National Research Foundation of Korea Grant funded by the Korean Government (NRF-2011-351-C00034). Z.L. is a visiting student from the Department of Physics, Peking University, sponsored by the UCLA cross-disciplinary scholars in science and technology (CSST) programme. H.Z. is grateful to the Camille and Henry Dreyfus Foundation for financial support through the Camille and Henry Dreyfus Postdoctoral Program in Environmental Chemistry (X.D.). X.D. acknowledges partial support by NSF CAREER award 0956171 (device fabrication and characterization) and ONR Young Investigator Award N00014-12-1-0745 (simulation). Y.H. acknowledges the NIH Director’s New Innovator Award Program 1DP2OD007279 (TEM characterization and preparation of BSCO sample).
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X.D conceived the research. X.D. and W.J.Y. designed the experiment. W.J.Y. performed most of the experiments including device fabrication, characterization and data analysis. Z.L. performed the simulations. H.Z. synthesized the graphene samples. Y.C. performed the TEM studies. Y.W. contributed to the preparation of BSCO flakes. Y.H. and X.D. supervised the research. X.D. and W.J.Y. co-wrote the paper. All authors discussed the results and commented on the manuscript.
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Yu, W., Li, Z., Zhou, H. et al. Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters. Nature Mater 12, 246–252 (2013). https://doi.org/10.1038/nmat3518
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DOI: https://doi.org/10.1038/nmat3518
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