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Ferromagnetic semiconductors: moving beyond (Ga,Mn)As

Nature Materials volume 4, pages 195–202 (2005)Cite this article

Abstract

The recent development of MBE techniques for growth of III–V ferromagnetic semiconductors has created materials with exceptional promise in spintronics, that is, electronics that exploit carrier spin polarization. Among the most carefully studied of these materials is (Ga,Mn)As, in which meticulous optimization of growth techniques has led to reproducible materials properties and ferromagnetic transition temperatures well above 150 K. We review progress in the understanding of this particular material and efforts to address ferromagnetic semiconductors as a class. We then discuss proposals for how these materials might find applications in spintronics. Finally, we propose criteria that can be used to judge the potential utility of newly discovered ferromagnetic semiconductors, and we suggest guidelines that may be helpful in shaping the search for the ideal material.

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Figure 1: The lattice structure and transition temperature trend in Ga1–xMnxAs.
Figure 2: The temperature dependence of the magnetization and resistivity of Ga0.083Mn0.917As (ref. 36).
Figure 3: Pictorial explanation of carrier-induced ferromagnetism in semiconductors.
Figure 4: Theory of carrier-induced ferromagnetism in semiconductors.

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Acknowledgements

This research has been supported by DARPA, ONR, the Welch Foundation and the National Science Foundation. We are also grateful to the many collaborators and colleagues whose views and insights we imperfectly reflect.

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  1. Department of Physics, University of Texas at Austin, Austin, 78712, Texas, USA

    A. H. MacDonald

  2. Department of Physics and Materials Research Institute, Pennsylvania State University, University Park, Pennsylvania, 16802, USA

    P. Schiffer & N. Samarth

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MacDonald, A., Schiffer, P. & Samarth, N. Ferromagnetic semiconductors: moving beyond (Ga,Mn)As. Nature Mater 4, 195–202 (2005). https://doi.org/10.1038/nmat1325

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