Letter abstract
Nature Materials 3, 769 - 773 (2004)
Published online: 10 October 2004 | doi:10.1038/nmat1235
Subject Categories: Electronic materials | Optical, photonic and optoelectronic materials | Surface and thin films
Epitaxial growth of InP nanowires on germanium
Erik P. A. M. Bakkers1, Jorden A. van Dam2, Silvano De Franceschi2, Leo P. Kouwenhoven2, Monja Kaiser1, Marcel Verheijen1, Harry Wondergem1 & Paul van der Sluis1
The growth of III–V semiconductors on silicon would allow the integration of their superior (opto-)electronic properties1, 2, 3 with silicon technology. But fundamental issues such as lattice and thermal expansion mismatch and the formation of antiphase domains have prevented the epitaxial integration of III–V with group IV semiconductors4, 5, 6. Here we demonstrate the principle of epitaxial growth of III–V nanowires on a group IV substrate. We have grown InP nanowires on germanium substrates by a vapour–liquid–solid7 method. Although the crystal lattice mismatch is large (3.7%), the as-grown wires are monocrystalline and virtually free of dislocations. X-ray diffraction unambiguously demonstrates the heteroepitaxial growth of the nanowires. In addition, we show that a low-resistance electrical contact can be obtained between the wires and the substrate.
- Philips Research Laboratories, Professor Holstlaan 4, 5656 AA Eindhoven, The Netherlands
- Kavli Institute of NanoScience and ERATO Mesoscopic Correlation Project, Delft University of Technology, PO Box 5046, 2600 GA Delft, The Netherlands
Correspondence to: Erik P. A. M. Bakkers1 e-mail: erik.bakkers@philips.com
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