Letter abstract
Nature Materials 3, 221 - 224 (2004)
doi:10.1038/nmat1099
Subject Categories: Electronic materials | Semiconductors | Magnetic materials
Anomalous Hall effect governed by electron doping in a room-temperature transparent ferromagnetic semiconductor
Hidemi Toyosaki1, Tomoteru Fukumura1, Yasuhiro Yamada1, Kiyomi Nakajima2,3, Toyohiro Chikyow2,3, Tetsuya Hasegawa3,4, Hideomi Koinuma3,5 and Masashi Kawasaki1,3
Ferromagnetic semiconductors are believed to be suitable for future spintronics, because both charge and spin degrees of freedom1, 2 can be manipulated by external stimuli. One of the most important characteristics of ferromagnetic semiconductors is the anomalous Hall effect. This is because the ferromagnetically spin-polarized carrier can be probed and controlled electrically, leading to direct application for electronics. Control of the Curie temperature3 and magnetization direction4 by electronic field, and photo-induced ferromagnetism5 have been performed successfully using the anomalous Hall effect for group III-V ferromagnetic semiconductors. In these cases, the operation temperature was much below room temperature because of the limited Curie temperature of less than 160 K (ref. 6). Here, we report on the anomalous Hall effect governed by electron doping in a room-temperature transparent ferromagnetic semiconductor, rutile Ti1–xCoxO2–
(of oxygen deficiency 
). This result manifests the intrinsic nature of ferromagnetism in this compound, and represents the possible realization of transparent semiconductor spintronics devices operable at room temperature.
- Institute for Materials Research, Tohoku University, Sendai 980-8577, Japan
- National Institute for Materials Science, Tsukuba 305-0044, Japan
- Combinatorial Materials Exploration and Technology, Tsukuba 305-0044, Japan
- Department of Chemistry, University of Tokyo, Tokyo 113-0033, Japan
- Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503, Japan
Correspondence to: Tomoteru Fukumura1 e-mail: fukumura@imr.tohoku.ac.jp
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