Introduction

Majarona fermions (MFs), novel particles which are their own anti-particles, were predicted more than seven decades ago but are yet to be identified1. Recently, much attention has been paid to search for MFs in condensed matter systems2,3,4,5,6,7,8,9,10. Among various proposed schemes, a typical one is to create MF at the interface between a conventional s-wave superconductor and a 3D topological insulator (TI)11,12,13, where a proximity-induced state resembling a spinless px+ipy superconductor is expected to occur. Experimentally, progresses have recently been made in the observations of a supercurrent over a relatively long distance in Nb-BiSb-Nb, Al-Bi2Te3-Al and W-Bi2Se3-W devices14,15,16, a perfect Andreev reflection of the helical mode in InAs/GaSb quantum wells17 and the opening of gap-like structures together with a conductance peak at the Fermi level in Sn-Bi2Se3 devices18. However, further characterizations are still needed to clarify the nature of the superconductor-topological insulator interface. In this work, we report the observation of a strong proximity effect in Pb-Bi2Te3 hybrid structures, based on which Josephson junctions and superconducting quantum interference devices (SQUIDs) can be constructed.

Results

Sample growth and device fabrication

Bi2Te3 single crystals were grown by Bridgeman method and were confirmed to be of high quality by X-ray diffraction (Fig. 1a). The carriers are of electron type, with a concentration of ~2×1018 cm−3 as determined from the Hall effect and the Shubnikov–de Haas (SdH) oscillation measurements at 2 K (Fig. 1b). Thin flakes of Bi2Te3 with typical sizes of 10 μm in length/width and 100~300 nm in thickness were exfoliated from a bulk crystal and transferred onto Si/SiO2 substrates. Pb electrodes of ~150 nm thick were fabricated onto the flakes via standard e-beam lithography, magnetron sputtering and lift-off techniques. To study the proximity effect along the lateral direction of the flakes, parallel Pb electrodes were directly deposited on top of the flakes (see insets of Figs. 2a and 2b). A more complicated sandwich structure (see Figs. 3a and 3b) was employed to study the penetration of the proximity effect in the thickness direction. The measurements were performed at low temperatures down to 15 mK in a dilution refrigerator or 250 mK in a 3He cryostat. The differential resistance between two selected electrodes was measured as a function of both dc bias current and applied magnetic field with a quasi-four-probe measurement configuration. Precise control of magnetic field to milli-Gauss level is achieved by using a Keithley 2400 source meter to drive the superconducting magnet of the cryostat.

Figure 1
figure 1

Characterizations of the Bi2Te3 crystal used in this experiment.

(a) X-ray diffraction pattern of the crystal. (b) Magneto-resistance of a Hall-bar shaped Bi2Te3 flake measured at 2 K (black) and 10 K (red) in perpendicular magnetic fields. The pronounced dip at zero magnetic field is caused by electron weak anti-localization due to strong spin-orbit coupling. Inset: difference of resistance between the 2 K curve and the 10 K curve, showing clearly the Shubnikov-de Haas oscillations at low temperatures, with an oscillation period of ~0.02 T−1.

Figure 2
figure 2

Proximity-effect-induced superconductivity in Pb-Bi2Te3-Pb structures along lateral direction.

(a) Inset: SEM image of type-I lateral Josephson junctions, with parallel Pb electrodes across the whole width of the Bi2Te3 flake. Main frame: a 2D image plot of the differential resistance dV/dI of junction #1 (indicated by the arrow), measured at 15 mK as a function of both magnetic field and dc bias current. The boundary of dV/dI from dark blue to light blue, which separates the superconducting state from the finite-resistance normal state, oscillates with magnetic field following the theoretically expected Fraunhofer pattern (the orange curve). (b) Inset: SEM image of type-II lateral Josephson junctions, with parallel Pb electrodes occupying the center part of the top surface. Main frame: The 2D image plot of dV/dI of junction #2 (indicated by the arrow), measured at 15 mK as a function of both magnetic field and dc bias current. The critical current oscillates with magnetic field in a way deviating from the standard Fraunhofer pattern. (c) Idc vs. Vdc curve of junction #2 measured at 15 mK and in a magnetic field of 0.5 G, with bias current sweeping from positive to negative (black) and vice versa (red). Obvious hysteretic behavior can be seen. (d) Temperature dependencies of the zero-bias resistance of junction #2, measured in two different magnetic fields. (e) dV/dI vs. Idc curves of junction #3 (type-I) composed of two Pb electrodes seperated by 3.5 μm, holding a supercurrent up to 120 mK.

Figure 3
figure 3

Proximity-effect-induced superconductivity in Pb-Bi2Te3-Pb sandwich structures.

(a) Optical image of a sandwich-structured device (device #4). (b) Illustration of the device structure. (c) Temperature dependence of the zero-bias resistance of device #4 measured from one top Pb electrode to another with a quasi-four-probe measurement configuration. Both ramping down (black) and up (red) curves are shown. The resistance jump at the higher temperature corresponds to the superconducting transition of the Pb film and the jump at the lower temperature corresponds to the superconducting transitions of the two sandwich junctions occurred simultaneously. (d) A typical dV/dI vs. Idc curve of device #4 measured at 0.3 K. The two jumps of dV/dI with similar amplitudes correspond respectively to the individual superconducting transition of the two sandwich junctions. (e) The magnetic field dependence of the resistance of device #4 measured at 0.3 K and with Idc = 0.

Proximity-effect-induced superconductivity in Pb-Bi2Te3-Pb lateral structures

To study the superconducting proximity effect along lateral direction, we have fabricated and investigated more than a dozen Josephson junctions that have parallel Pb electrodes of various lengths and inter-electrode distances deposited onto the top surface of the flakes. The insets of Figs. 2a and 2b show the scanning electron microscope (SEM) images of two types of junctions, one with Pb electrodes across the whole width of the flakes (junction #1, categorized as type-I) and the other with Pb electrodes located in the middle of the upper surface, away from the edges (junction #2, categorized as type-II).

Figures 2a and 2b show respectively the measured differential resistance dV/dI of the two junctions as functions of both magnetic field B and bias current Idc. The dark blue region represents the zero-resistance superconducting state. It can be seen that the critical current Ic is modulated by magnetic field, demonstrating a Fraunhofer-like pattern as expected for an s-wave type Josephson junction19:

where Ic(0) is the critical current of the junction at zero magnetic field,ΦJis the flux through the junction area and φ0 = h/2e is the flux quanta.

The measured oscillation periods of the Fraunhofer pattern were consistent with the junction areas for all junctions. For example, the measured oscillation period for junction #2, ΔB = 1.45 G, corresponds to an effective junction area: Seff = φ0/ΔB = 14.3 μm2, which is consistent with the actual junction area S = 13.8 μm2 estimated from the length (6 μm) and the center-to-center distance (2.3 μm) of the Pb electrodes (with the flux taken into account) .

For type-I junctions, the experimental data agree well with the theoretical Fraunhofer pattern (see, e.g., Fig. 2a for junction #1), with the ratio of the second peak height to the main peak height close to the expected value of 0.22. For type-II junctions, however, the measured oscillation patterns deviate significantly from the expectation, with the peak height ratio ranging from 0.08 to 0.11 for seven such junctions investigated (the ratio is 0.1 for junction #2, see Fig. 2b). The results indicate a non-uniform spatial distribution of the supercurrent in type-II junctions20, presumably due to the stray supercurrent flowing through the area near the two sides of the junctions.

Figure 2c shows one of the current vs. voltage (Idc vs. V) curves of junction #2 at 15 mK. A hysteretic loop is seen in bi-directional current sweepings. We note that the asymmetric Idc-V curve in uni-directional current sweeping is not likely to be caused by self-heating, because the hysteretic behavior remains in the junctions with a very small critical current (for example, junctions with a 1.5-μA critical current still exhibit obvious hysteretic loops see Fig. S1 of Supplementary information). Instead, the hysteretic behavior would indicate the formation of an underdamped Josephson junction21 between adjacent Pb electrodes. An underdamped behavior is usually seen in planar tunneling junctions with significantly large junction capacitance and shunted resistance19,21. In our junctions, however, the capacitance should be negligibly small compared to planar tunneling junctions and the junction resistance is only around one or several Ohms. Therefore, the appearance of a hysteretic behavior is quite unusual. It might be related to the strong spin-orbit coupling in Bi2Te3, being less dissipative because of reduced back scattering.

To examine how far a supercurrent can be established through proximity effect along the lateral direction, we have fabricated a number of junctions with different inter-electrode distances. For junction #2, which has an inter-electrode distance of 0.7 μm, a supercurrent held up to at least 1.5 K at zero magnetic field, as shown in Fig. 2d. For another junction with much longer inter-electrode distance of 3.5 μm (junction #3, SEM image not shown), a supercurrent held up to 120 mK, as shown in Fig. 2e. A 2D image plot of the differential resistance of junction #3 as a function of both magnetic field and bias current can be found in Fig. S2 of Supplementary information. The appearance of a proximity-effect-induced supercurrent over such a long distance would enable us to construct more complicated devices for testing various interesting physics.

Proximity-effect-induced superconductivity in Pb-Bi2Te3-Pb sandwich structures

To test whether a supercurrent can also be established via proximity effect along the thickness direction of the flakes, two sandwich-like devices were fabricated and similar results were obtained. The device structure is shown in Fig. 3a and illustrated in Fig. 3b. A Pb film was firstly sputtered on one surface of the flakes when they were still on the Scotch tape after being exfoliated. Then those flakes of 100–300 nm in thickness were selected and transferred onto a Si/SiO2 substrate, with the Pb side facing down to the substrate. Afterwards, an overexposed PMMA layer was coated to cover one side/edge of the selected flakes, serving as an insulating mask. Finally, two top Pb electrodes, with a same contacting area of ~3×2 μm2 and separated by ~10 μm, were deposited on top of each flake. According to our previous investigation on lateral junctions, we know that no supercurrent can be established over ~10 μm distance along the lateral direction above 100 mK. Therefore, the measurement between the two top Pb electrodes actually probes the superconducting transition of the two sandwich junctions in the thickness direction.

Figure 3c shows the temperature dependence of quasi-four-probe resistance of device #4 between the two top electrodes. With decreasing temperature, the resistance of both devices undergoes two superconducting transitions around 7~8 K, one at a slightly higher temperature but with an obviously smaller resistance jump, the other at a lower temperature and with a larger resistance jump.

There are two possible scenarios for the occurrence of the two transitions. In the first scenario, the resistance jump at the higher temperature is caused by the superconducting transition of the bottom Pb film, which partially shorts out the flake and the resistance jump at the lower temperature is due to the proximity-induced superconducting transition of the two sandwich junctions. In the second scenario, these two resistance jumps correspond to the individual superconducting transitions of the two sandwich junctions, respectively.

The dV/dI vs. Idc curve shown in Fig. 3d is in favor of the first scenario. As can be seen, two jumps with different critical currents appear on the dV/dI vs. Idc curve. The two jumps there should all be ascribed to the superconducting transitions of the sandwich junctions, not that one to the superconducting transition of the junctions and one to the superconducting transition of the Pb film at the bottom, since the critical current of a Pb film should be much larger. The data in Fig. 3d tell us that the resistances of the two sandwich junctions are about the same before becoming superconducting. We therefore believe that the two resistance jumps in the R vs. T curve, with different but well-defined amplitudes (because of their step-like shapes), have different origins. We ascribe the jump occurred at the higher temperature to the superconducting transition of the Pb film and the one at the lower temperature to the two sandwich junctions. Actually the lower transition of device #5 contains double jumps (see Fig. S3 in Supplementary information), which is likely due to a slight difference between the two sandwich junctions.

The onset transition temperature of the sandwich junctions is 7.17 K for device #4 and 7.15–7.2 K for device #5 (see Fig. S3 in Supplementary information), which is close to or only slightly lower than the superconducting temperature of bulk Pb (Tc = 7.2 K). It indicates that a strong proximity effect occurs at the Pb-Bi2Te3 interface, which drives the flake in the whole thickness direction into superconducting state such a high temperature.

The Tc of the bottom Pb film is 7.34 K for device #4 and 7.8 K for device #5, which is higher than the Tc of pure Pb, indicating that an alloy phase is formed at the interface. The alloy phase is likely formed during the two baking processes, each at 180°C and lasting for 2 min, for making the over-exposed PMMA mask and the PMMA for defining the top Pb electrodes. If no baking process is applied after the deposition of Pb film on Bi2Te3, as in the preparation of our lateral Josephson junctions and SQUIDs, the onset Tc of the Pb film remains to be 7.2 K (see Fig. S5 in Supplementary information).

Construction of SQUIDs based on the proximity-effect-induced superconductivity

Based on the proximity-effect-induced superconductivity, more than ten SQUIDs with various shapes and areas were fabricated on the surface of Bi2Te3 flakes and measured down to dilution refrigerator temperatures. One of the typical results measured at 15 mK is shown in Fig. 4. The critical current of the SQUIDs shows standard interference patterns against magnetic field. In addition, the envelope of the interference pattern is modulated by the Fraunhofer diffraction patterns of each single junction. These behaviors can be described by the following formula19:

Figure 4
figure 4

Superconducting quantum interference device (SQUID) based on the proximity-effect-induced superconductivity.

Lower inset: SEM image of a SQUID with Pb electrodes on the top surface of a Bi2Te3 flake. Main frame: differential resistance of the SQUID measured at 15 mK as a function of both magnetic field and bias current. Upper inset: Details of the orange rectangle region in the main frame, showing clearly the oscillations of critical current with magnetic field due to interference along the ring of the SQUID and the modulation of the oscillations by the Fraunhofer diffraction pattern of the single junctions.

where Ic(0) is the critical current of each single junction at zero magnetic field, ΦJis the flux through the single junction area, andΦ is the flux through the ring area of the SQUID.

The periods of both the interference and the Fraunhofer diffraction are found to be consistent with their corresponding areas, i.e., the areas of the ring and the junction, respectively. Specifically, from the data shown in Fig. 4, the observed periods are 0.48 G and 3.7 G, corresponding to areas of 43.2 μm2 and 5.6 μm2, which are in agreement with the measured areas of 38.5 μm2 and 6.4 μm2 for the ring and the junction, respectively. Since the effective areas of small SQUIDs are not easy to be determined if flux is being compressed by the surrounding superconducting electrodes, a SQUID with a large area and thinner arms were investigated. The result is shown in Fig. S4 of Supplementary information. It confirms that the period-to-area relation for conventional SQUIDs holds accurately in the Pb-Bi2Te3-Pb proximity-effect SQUIDs.

Discussion

We have demonstrated that a strong proximity effect occurs at the Pb-Bi2Te3 interface, i.e., the whole volume of Bi2Te3 flake beneath the Pb electrodes becomes superconducting at a temperature very close to the Tc of Pb electrodes and that a Josephson supercurrent can be established over a distance of several microns between two Pb electrodes. To our knowledge, such a strong proximity effect is not commonly seen in literature. Its origin needs to be clarified. In particular, the Pb-Bi2Te3 interface needs to be characterized using crystallographic methods.

From the observed interference and Fraunhofer diffraction patterns, the maximum of critical current is located at zero magnetic field. It infers that the Josephson devices being investigated are of s-wave type. So far, no sign of unconventional pairing symmetry is recognized, presumably due to the dominating role of the Pb electrodes and/or the trivial superconducting feature of the Bi2Te3 bulk beneath the Pb electrodes. More sophisticated device structures are demanded to reveal the possible unconventional pairing symmetry at the s-wave superconductor/topological insulator interface and to help searching for Majorana fermions at a device level.

Methods

Bi2Te3 single crystals were exfoliated to thin flakes using a Scotch tape. The flakes were then transferred onto Si/SiO2 substrates. Top Pb electrodes on the flakes were fabricated by using standard e-beam lithography and magnetron sputtering techniques. For the sandwich-structured junctions, a layer of Pb film was firstly sputtered onto Bi2Te3 flakes while they have been exfoliated from a bulk crystal but still staying on the Scotch tape. Then the flakes were transferred onto Si/SiO2 substrates with the Pb-side surface facing down, as confirmed by an optical microscope. An overexposed PMMA layer covering one edge of the flakes was then fabricated, serving as an insulating mask to prevent the top Pb electrodes from touching the bottom Pb film. During the fabrications of the over exposed PMMA mask layer and the top Pb electrodes, the bottom Pb-Bi2Te3 interface was baked twice at 180°C, each lasting for 2 min.