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RESISTIVE SWITCHING

Silicon memristors go electric

Nature Electronics volume 2, pages 56–57 (2019)Cite this article

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Reliable memristive devices in which switching is based solely on electronic effects can be created from amorphous silicon by doping with oxygen and nitrogen.

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Fig. 1: Resistive switching in nanometallic memristors.

adapted from ref. 9, Springer Nature Ltd.

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  1. Forschungszentrum Jülich, Peter-Grünberg-Institut (PGI 7), Jülich, Germany

    Ilia Valov

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  1. Ilia Valov
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Correspondence to Ilia Valov.

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Valov, I. Silicon memristors go electric. Nat Electron 2, 56–57 (2019). https://doi.org/10.1038/s41928-019-0209-2

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