Integrating magnetoresistive random access memory with advanced fin field-effect transistor technology provides a route towards energy-efficient computing.
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Raychowdhury, A. MRAM and FinFETs team up. Nat Electron 1, 618–619 (2018). https://doi.org/10.1038/s41928-018-0182-1
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DOI: https://doi.org/10.1038/s41928-018-0182-1
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