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Electrical doping in halide perovskites

Nature Reviews Materials volume 6, pages 531–549 (2021)Cite this article

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Abstract

Electrical doping (that is, intentional engineering of carrier density) underlies most energy-related and optoelectronic semiconductor technologies. However, for the intensely studied halide perovskite family of semiconductors, reliable doping remains challenging, owing to, for example, compensation from and facile migration of intrinsic defects. In this Review, we first discuss the underlying fundamentals of semiconductor doping and then investigate different doping strategies in halide perovskites, including intrinsic defect, extrinsic defect and charge transfer doping, from an experimental as well as a theoretical perspective. We outline the advantages and pitfalls of different characterization techniques to assess doping and examine the impact of doping on optoelectronic properties. Finally, we highlight challenges that need to be overcome to gain control over the electronic properties of this important material class.

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Fig. 1: n-Doping and p-doping in silicon and impact on interfaces.
Fig. 2: Halide perovskite doping through precursor ratio variations.
Fig. 3: Halide perovskite doping with substitutional and interstitial impurities.
Fig. 4: Charge transfer doping in halide perovskites.
Fig. 5: Characterization of doping.

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Acknowledgements

The authors thank A. Kahn for the helpful discussions. J.E. and D.B.M. are supported by the National Science Foundation under grant no. 1709294. Y.Y. acknowledges support from the Center for Hybrid Organic-Inorganic Semiconductors for Energy (CHOISE), an Energy Frontier Research Center funded by the Office of Basic Energy Sciences, Office of Science within the U.S. Department of Energy through contract number DE-AC36-08G028308.

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  1. Department of Mechanical Engineering and Materials Science, Duke University, Durham, NC, USA

    Julie Euvrard & David B. Mitzi

  2. Department of Physics and Astronomy, and Wright Center for Photovoltaic Innovation and Commercialization, The University of Toledo, Toledo, OH, USA

    Yanfa Yan

  3. Department of Chemistry, Duke University, Durham, NC, USA

    David B. Mitzi

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Euvrard, J., Yan, Y. & Mitzi, D.B. Electrical doping in halide perovskites. Nat Rev Mater 6, 531–549 (2021). https://doi.org/10.1038/s41578-021-00286-z

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