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Accurate characterization of next-generation thin-film photodetectors

Nature Photonics volume 13, pages 1–4 (2019)Cite this article

The performance of photodetectors fabricated from emerging semiconductors such as perovskites, quantum dots, two-dimensional materials or organics, for example, can be prone to misinterpretation. This Comment exposes the problems and proposes some guidelines for accurate characterization.

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Fig. 1: Frequency dependence of the responsivity, noise and specific detectivity.
Fig. 2: Noise equivalent power determination.

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Acknowledgements

J.H. and Y.F. acknowledge financial support from the Academic Research Initiative in Department of Home Security under award 2014-DN-077-ARI069 and the National Science Foundation under award ECCS – 1747674. P.M. and A.A. acknowledge the support of the European Regional Development Fund (Welsh European Funding Office) and Swansea University for the Sustainable Advanced Materials strategic initiative.

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Authors and Affiliations

  1. Department of Applied Physical Sciences, University of North Carolina, Chapel Hill, NC, USA

    Yanjun Fang & Jinsong Huang

  2. Department of Physics, Swansea University, Swansea, UK

    Ardalan Armin & Paul Meredith

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  1. Yanjun Fang
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  2. Ardalan Armin
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  3. Paul Meredith
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  4. Jinsong Huang
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Correspondence to Paul Meredith or Jinsong Huang.

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Fang, Y., Armin, A., Meredith, P. et al. Accurate characterization of next-generation thin-film photodetectors. Nature Photon 13, 1–4 (2019). https://doi.org/10.1038/s41566-018-0288-z

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