Structural transitions departing from the known phases of MoTe2 are induced by applying a vertical electric field to multilayers of this material. These distorted structures show distinct conducting states that can be used for resistive memories.
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Rehn, D.A., Reed, E.J. Memristors with distorted structures. Nature Mater 18, 8–9 (2019). https://doi.org/10.1038/s41563-018-0257-4
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DOI: https://doi.org/10.1038/s41563-018-0257-4
