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Bright light-emitting diodes based on organometal halide perovskite

Abstract

Solid-state light-emitting devices based on direct-bandgap semiconductors have, over the past two decades, been utilized as energy-efficient sources of lighting. However, fabrication of these devices typically relies on expensive high-temperature and high-vacuum processes, rendering them uneconomical for use in large-area displays1,2. Here, we report high-brightness light-emitting diodes based on solution-processed organometal halide perovskites. We demonstrate electroluminescence in the near-infrared, green and red by tuning the halide compositions in the perovskite. In our infrared device, a thin 15 nm layer of CH3NH3PbI3–xClx perovskite emitter is sandwiched between larger-bandgap titanium dioxide (TiO2) and poly(9,9′-dioctylfluorene) (F8) layers, effectively confining electrons and holes in the perovskite layer for radiative recombination. We report an infrared radiance of 13.2 W sr−1 m−2 at a current density of 363 mA cm−2, with highest external and internal quantum efficiencies of 0.76% and 3.4%, respectively. In our green light-emitting device with an ITO/PEDOT:PSS/CH3NH3PbBr3/F8/Ca/Ag structure, we achieved a luminance of 364 cd m−2 at a current density of 123 mA cm−2, giving external and internal quantum efficiencies of 0.1% and 0.4%, respectively. We show, using photoluminescence studies, that radiative bimolecular recombination is dominant at higher excitation densities. Hence, the quantum efficiencies of the perovskite light-emitting diodes increase at higher current densities. This demonstration of effective perovskite electroluminescence offers scope for developing this unique class of materials into efficient and colour-tunable light emitters for low-cost display, lighting and optical communication applications.

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Figure 1: Structure and energy-level diagram of the perovskite light-emitting diode (PeLED).
Figure 2: Absorption and normalized emission spectra of CH3NH3PbI3–xClx perovskite.
Figure 3: Device characteristics of infrared perovskite light-emitting diode (PeLED).
Figure 4: Device characteristics of infrared perovskite light-emitting diode (PeLED) modified with Al2O3.
Figure 5: Device characteristics of visible perovskite light-emitting diode (PeLED).

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Acknowledgements

The authors thank the EPSRC (UK) for financial support. Z.K.T. acknowledges a research scholarship from the Singapore National Research Foundation (Energy Innovation Program Office). P.D. thanks the Marie Curie Intra-European Fellowship for financial support. T.B. thanks the LMU Center of NanoScience, the Excellence Cluster Nanosystems Initiative Munich (NIM) and the Bavarian Network ‘Solar Technologies Go Hybrid’ for financial support.

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Contributions

The original device architectures were conceived by Z.K.T. Z.K.T. designed and fabricated the PeLED, performed most experiments and data analyses, and wrote the paper. R.S.M. optimized the electron-injection layers in the devices. M.L.L. fabricated the red PeLED. P.D., R.H. and F.H. prepared the perovskite materials. R.H., F.D. and M.P. assisted with PLQE studies. A.S. performed PDS studies. L.M.P. and D.C. assisted with experiments. T.B., H.J.S. and R.H.F. guided the work.

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Correspondence to Richard H. Friend.

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The authors declare no competing financial interests.

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Tan, ZK., Moghaddam, R., Lai, M. et al. Bright light-emitting diodes based on organometal halide perovskite. Nature Nanotech 9, 687–692 (2014). https://doi.org/10.1038/nnano.2014.149

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